Deposition thickness characterization of Al, NiCr & SiO2 thin film on substrate by arc-12M sputtering

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M. Julius St, Achmad Saputra, Elly Herlia Effendi

1997 International Symposium on IC Technology, Systems and Applications Vol. 7 Conference paper Cited by 0 Quartile

Abstract

This paper is the evaluation result of ARC-12 M sputtering system that is held in PUSLITBANG TELKOMA LIPI BANDUNG. The purpose is to analyze Argon gas pressure and power concern with film thickness each time which in formed on substrate. Three layer materials that are Aluminum, Nickel Chrome and Silicon Dioxide are evaluated, so that produce characteristic of deposition film thickness on substrate. From the evaluation result, it obtained two characteristic curves. First, the characteristic curve of film thickness linear deposition time for each target. The second is the characteristic curve of deposition rate, that is increasing power value tend to increase deposition rate value, while increasing Argon gas pressure causes decreasing deposition rate. From the deposition rate characteristic cuive, it's obtained that comparison of deposition rate for every target in power and the same Argon gas pressure observed from electric conductivity characteristic and its arranging particles mass that in Aluminum > Nickel Chrome > Silicon Dioxide.

Affiliations

Electrical Engineering Department, Brawijaya University, Malang-65145, Jalan Mayjen Haryono 167, Indonesia; Engineering Faculty, Brawijaya University, Malang-65145, Jalan Mayjen Haryono 167, Indonesia; Puslitbang Telkoma Lipi Bandung, Indonesia

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